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TCS1200

SpecificationsMaximum Power DissipationDevice Dissipation @ 251.......... 2095 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) ........65 VEmitter to Base Voltage (BVebo)........ 3.5 VCollector Current (Ic).............. 60 AMaximum TemperaturesStorage Temperature ........-65 to +200...

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SeekIC No. : 004515730 Detail

TCS1200: SpecificationsMaximum Power DissipationDevice Dissipation @ 251.......... 2095 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) ........65 VEmitter to Base Voltage (BVebo)........ 3.5 V...

TCS1200 Data Sheet

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Part Number:
TCS1200
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 251.......... 2095 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) ........65 V
Emitter to Base Voltage (BVebo)........ 3.5 V
Collector Current (Ic).............. 60 A
Maximum Temperatures
Storage Temperature ........-65 to +200
Operating Junction Temperature +200


Description

The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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