SZP-3026Z, SZP30339RL, SZP30342RL Selling Leads, Datasheet
MFG:RFMD Package Cooled:N/A D/C:N/A
SZP-3026Z, SZP30339RL, SZP30342RL Datasheet download
Part Number: SZP-3026Z
MFG: RFMD
Package Cooled: N/A
D/C: N/A
SZP-3026Z, SZP30339RL, SZP30342RL
- Table of contents:
Info of SZP-3026Z
Info of SZP30339RL
Info of SZP30342RL
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About SZP-3026Z
PDF/DataSheet Download
Datasheet: SZP-3026Z
File Size: 418423 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SZP-3026Z
PDF/DataSheet Download
Datasheet: SZP-3026Z
File Size: 418423 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SZP-3026Z
PDF/DataSheet Download
Datasheet: SZP-3026Z
File Size: 418423 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
SZP-3026Z General Description
Sirenza Microdevices' SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package.
This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 2.7-3.8GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product features a RoHS Compliant and Green package with matte tin finish, designated by the 'Z' suffix.
SZP-3026Z Maximum Ratings
| Parameters | Value | Unit |
| VC1 Collector Bias Current (IVC1) Device Voltage (Vcc) Power Dissipation Operating Lead Temperature (TL) Max RF Input Power for 50 ohm output load Max RF Input Power for 10:1 VSWR output load Storage Temperature Range Operating Junction Temperature (TJ) ESD Human Body Model |
1500 7.0 6 -40 to +85 27 23 40 to +150 +150 500 |
mA V W ºC dBm dBm ºC ºC V |
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH' j-l
SZP-3026Z Features
• P1dB = 33.5dBm @ 5V
• 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA Pout = 27dBm @ 2.5% EVM, Vcc 6V, 590mA
• On-chip Output Power Detector
• Input Prematched to ~5 ohms
• Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework
• Power up/down control < 1ms
• 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA Pout = 27dBm @ 2.5% EVM, Vcc 6V, 590mA
• On-chip Output Power Detector
• Input Prematched to ~5 ohms
• Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework
• Power up/down control < 1ms
SZP-3026Z Typical Application
• 802.16 WiMAX Driver or Output Stage
• WLL
• WLL
SZP-3026Z Connection Diagram
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