Features: ` P1dB=33dBm @ 5V` 802.11a 54Mb/s Class AB Performance` POUT=25dBm @ 2.5% EVM, .9GHz, 5V, 680mA` On-Chip Input Power Detector` Internally Prematched Input and utput` Proprietary Low Thermal Resistance ackage` Power Up/...
SZP-5026Z: Features: ` P1dB=33dBm @ 5V` 802.11a 54Mb/s Class AB Performance` POUT=25dBm @ 2.5% EVM, .9GHz, 5V, 680mA` On-Chip Input Power Detector` Internally ...
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Parameter | Rating | Unit |
VC1 Collector Bias Current (IVC1) | 1500 | mA |
Device Voltage (VCC)* | 6.0 | V |
Power Dissipation (PDISS) | 6 | W |
Operating Lead Temperature (TL) | -40 to +85 | |
**Max RF output Power for 50 continuous long term operation |
30 | dBm |
Max Modulated (***OFDM) RF Input Power for 50 output load |
28 | dBm |
Max Modulated (***OFDM) RF Input Power for 10:1 VSWR output load |
21 | dBm |
Storage Temperature Range | -40 to +150 | |
Operating Junction Temperature (TJ) | +150 | |
ESD Human Body Model | 1000 | V |
Moisture Sensitivity Level | MSL 1 |
RFMD's SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar ransistor (HBT) power amplifier. SZP-5026Z is designed with InGaP-on-GaAs device technology nd fabricated with MOCVD for an ideal combination of low cost and high reliability.
SZP-5026Z is specifically designed for use as a driver or final stage power mp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pre-matched on oth ports to simplify external application circuit design. SZP-5026Z features an input power etector, on/off power control, ESD protection, excellent overall robustness, and a and reworkable and thermally enhanced surface-mount SOF-26 packag