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SUP45N05-20L, SUP57N20-33, SUP60N06

Table of contents:
Info of SUP45N05-20L
Info of SUP57N20-33
Info of SUP60N06

SUP45N05-20L, SUP57N20-33, SUP60N06 Selling Leads, Datasheet

MFG:VISHAY Package Cooled:TO-220 D/C:06+07+pb-free

SUP45N05-20L, SUP57N20-33, SUP60N06 Picture

SUP45N05-20L, SUP57N20-33, SUP60N06 Datasheet download

Five Points

Part Number: SUP45N05-20L

MFG: VISHAY

Package Cooled: TO-220

D/C: 06+07+pb-free

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SUP45N05-20L General Description

The SUP45N05-20L/SUB45N05-20L(175 MOSFET, N-Channel 50-V (D-S), logic level) is a kind of vishay siliconix, and the absolute maximum ratings(Tc=25 unless otherwise noted) are drain-source voltage(VDS)=50V, gate-source voltage(VGS)=±20 V, continuous drain current (TJ = 25)(ID)=45A(TC= 25)/32A(TC=125)(note:Package limited.), pulsed drain current(IDM)=100A, avalanche current(IAR)=25A, repetitive avalanche energy(note:Duty cycle 1%.)L = 0.1 mH(EAR)=100mJ, maximum power dissipation(note:Duty cycle 1%.)(PD)=93W(NOTE:See SOA curve for voltage derating.)/3.75W(NOTE:When mounted on 1"square PCB (FR-4 material).), operating junction and storage temperature range(TJ, Tstg)=55 to 175.

And some static of SUP45N05-20L/SUB45N05-20L are drain-source breakdown voltage(V(BR)DSS)(@ VDS = 0 V, ID = 250 uA)=50(min)V, gate-body leakage(IGSS)(@ VDS = 0 V, VGS =±20)=±100 nA, drain-source on-state resistance (rDS(on); @VGS = 10 V, ID = 30 A)=0.018, drain-source on-state resistance (rDS(on); @VGS = 10 V, ID = 30 A, Tj=125)=0.030, drain-source on-state resistance (rDS(on); @VGS = 4.5 V, ID =45A)=0.020, forward transconductance(gfs)(@VDS = 15 V, ID = 45 A)=20S(min).

The source-drain diode ratings and characteristics (TC = 25)(note:Independent of operating temperature.) are pulsed c(ISM)=43A(max), forward voltage(note:Pulse test; pulse width 300s, duty cycle 2%)(@ VSD IF =45A, VGS = 0 V)=1.5V(max), reverse recovery time(trr)(@ IF=45A, di/dt =100 A/s)=49100nsV. The current sense characteristics of SUP45N05-20L/SUB45N05-20L are current sensing ratio(r)(@ ID = 1 A, VGSS = 10 V, RSENSE = 2.2)=420/520/620, mirror active resistance(rm(on))=VGS =10 V, ID =10 mA=3.5(typ).

SUP45N05-20L Maximum Ratings

SUP45N05-20L Features

SUP57N20-33 General Description

N-Channel 200-V (D-S) 175C MOSFET

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