SUP28N15-52

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 28 A
Package / Case : TO-220AB-3
Resistance Drain-Source RDS (on) : 52 mOhms


Features:

TrenchFET^® Power MOSFETS
175^oC Junction Temperature
PWM Optimized




Application

Primary Side Switch




Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	150	V
Gate-Source Voltage		VGS	±20
Continuous Drain Currentd (TJ = 175)	TC = 25	ID	28	A
	TC = 125		16
Continuous Source Current (Diode Conduction)		IS	28
Pulsed Drain Current		IDM	50
Avalanche Current		IAS	25
Repetitive Avalanche Energy(Duty Cycle 1%)	L = 0.1 mH	EAS	31	mJ
Power Dissipation	TC = 25	PD	120c	W
	TA = 25b		3.75
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 175

Description

N-Channel 150-V (D-S) 175C MOSFET SUP28N15-52