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This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STP6NM60N Maximum Ratings
Symbol
Parameter
Value
Unit
TO-220 DPAK/IPAK
TO-220FP
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25
4.6
4.6(1)
A
ID
Drain current (continuous) at TC = 100
2.9
2.9(1)
A
IDM(2)
Drain current (pulsed)
18.4
18.4(1)
A
PTOT
Total dissipation at TC = 25
45
20
A
dv/dt (3)
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25)
--
2500
V
Tj,Tstg
Operating junction temperature Storage temperature
-55 to 150
1. Limited by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 4.6A, di/dt 400A/s, VDD = 80% V(BR)DSS