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The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.
STP08IE120F4 Maximum Ratings
Symbol
Parameter
Value
Unit
VCS(SS)
Collector-source voltage (VBS = VGS = 0 V)
1200
V
VBS(OS)
Base-source voltage (IC = 0, VGS = 0 V)
30
V
VSB(OS)
Source-base voltage (IC = 0, VGS = 0 V)
17
V
VGS
Gate-source voltage
± 17
V
IC
Collector current
8
A
ICM
Collector peak current (tP < 5ms)
24
A
IB
Base current
6
A
IBM
Base peak current (tP < 5ms)
12
A
Ptot
Total dissipation at Tc = 25°C
21
W
Tstg
Storage temperature
-40 to 150
°C
TJ
Max. operating junction temperature
150
°C
STP08IE120F4 Features
High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47 Very low turn-off cross over time