MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:N/A D/C:07/08+
STP60NF06-E-M/ST, STP60NF06-E-P, STP60NF06FP Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: N/A
D/C: 07/08+
Description: MOSFET N-CH 60V 30A TO220FP
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP60NF06FP
File Size: 260572 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP60NF06FP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1810pF @ 25V |
| Power - Max | 30W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP60NF06FP STP60NF06FP 497 3197 5 ND 49731975ND 497-3197-5 |
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP60NF06 |
STP60NF06FP |
V | ||
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V | |
| VGS |
Gate- source Voltage |
± 20 |
V | |
| ID |
Drain Current (continuos) at TC = 25°C |
60 |
37 |
A |
| ID |
Drain Current (continuos) at TC = 100°C |
42 |
26 |
A |
| IDM () |
Drain Current (pulsed) |
240 |
148 |
A |
| PTOT |
Total Dissipation at TC = 25°C |
110 |
42 |
W |
|
Derating Factor |
0.73 |
0.28 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
V/ns | ||
| VISO |
Insulation Winthstand Voltage (DC) |
V | ||
|
Storage Temperature |
°C | |||
|
Max. Operating Junction Temperature | ||||
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