MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:96
STP15N25, STP15NK50FP, STP15NM60ND Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-220
D/C: 96
Description: MOSFET N-CH 600V 14A TO-220
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | ||
|
STP15NK50Z STB15NK50Z STB15NK50Z-1 |
STP15NK50ZFP |
STW15NK50Z | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | ||
| VGS | Gate- source Voltage |
±30 |
V | ||
| ID | Drain Current (continuos) at TC = 25 |
14 |
14(*) |
14 |
A |
| ID | Drain Current (continuos) at TC = 100 |
8.8 |
8.8(*) |
8.8 |
A |
| IDM(`) | Drain Current (pulsed) |
56 |
56(*) |
56 |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
40 |
160 |
W |
| Derating Factor |
1.28 |
0.32 |
1.28 |
W/ | |
| IGS | Gate-source Current (DC) |
mA | |||
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
4000 |
V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
-- |
2500 |
- |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| ||
| Technical/Catalog Information | STP15NM60ND |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1250pF @ 50V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP15NM60ND STP15NM60ND 497 8443 5 ND 49784435ND 497-8443-5 |
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