SSP1N60A, SSP1N60B, SSP20N06 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-220 D/C:03+
SSP1N60A, SSP1N60B, SSP20N06 Datasheet download
Part Number: SSP1N60A
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 03+
SSP1N60A, SSP1N60B, SSP20N06
- Table of contents:
Info of SSP1N60A
Info of SSP1N60B
Info of SSP20N06
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About SSP1N60A
PDF/DataSheet Download
Datasheet: SSP1N60A
File Size: 433431 KB
Manufacturer:
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About SSP1N60B
PDF/DataSheet Download
Datasheet: SSP1N60B
File Size: 873195 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSP/0N-0A
PDF/DataSheet Download
Datasheet: SSP/0N-0A
File Size: 175611 KB
Manufacturer:
Download : Click here to Download
SSP1N60A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
600 |
V |
|
ID |
Continuous Drain Current (TC=25 ) |
1 |
A |
|
Continuous Drain Current (TC=100OC ) |
0.6 | ||
|
IDM |
Drain Current-Pulsed |
3 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
44 |
mJ |
|
IAR |
Avalanche Current |
3.4 |
A |
|
EAR |
Repetitive Avalanche Energy |
3.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
3.5 |
V/ns |
|
PD |
Total Power Dissipation (TC=25OC ) | ||
|
34 |
W/OC | ||
|
TJ , TSTG |
Operating Junction and |
- 55 to +150 |
OC |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SSP1N60A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 500V
Lower RDS(ON) : 4.046 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 500V
Lower RDS(ON) : 4.046 (Typ.)
SSP1N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSP1N60B Maximum Ratings
| Symbol | Parameter | SSP1N60B | SSS1N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
1.0 | 1.0* | A |
| 0.6 | 0.6 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 3.0 | 3.0 * | A |
| VGSS | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 50 | mJ | |
| IAR | Avalanche Current (Note 1) | 1.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.4 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
34 | 17 | W |
| 0.27 | 0.13 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
SSP1N60B Features
• 1.0A, 600V, R DS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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