SSP2N60A

The SSP2N60A is designed as advanced power MOSFET.

SSP2N60A has seven features. (1)Avalanche rugged technology. (2)Rugged gate oxide technology. (3)Lower input capacitance. (4)Improved gate charge. (5)Extended safe operating area. (6)Lower leakage current which would be max 25uA at Vds=600V. (7)Lower Rds(on) which would be typ 3.892ohms. Those are all the main features.

Some absolute maximum ratings of SSP2N60A have been concluded into several points as follow. (1)Its Drain to source voltage would be 600V. (2)Its continuous drain current would be 2A at 25°C and would be 1.3A at 100°C. (3)Its drain current-pulsed would be 6A. (4)Its gate to source voltage would be +/-30V. (5)Its single pulsed avalanche energy. (6)Its avalanche current would be 2A. (7)Its repetitive avalanche energy would be 5.4mJ. (8)Its peak diode recovery dv/dt would be 3.0V/ns. (9)Its total power dissipation would be 54W and would be 0.43W/°C for linear derating factor. (10)Its operating junction and storage temperature range would be from -55°C to 150°C. (11)Its maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SSP2N60A are concluded as follow. (1)Its drain to source breakdown voltage would be min 600V. (2)Its breakdown voltage temperature coeff. would be typ 0.77V/°C. (3)Its gate threshold voltage would be min 2.0V and max 4.0V. (4)It gate to source leakage forward would be max 100nA. (5)Its gate to source leakage reverse would be max -100nA. (6)Its drain to source leakage current would be max 25uA at Vds=600V and would be max 250uA at Vds=480V and Tc=125°C. (7)Its static drain to source on-state resistance would be max 5.0ohms. (8)Its forward transconductance would be typ 1.37ohms. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!