SSP1N50B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 4.1 Ohms


Features:

• 1.5A, 520V, R _DS(on) = 5.3Ω @V_GS = 10 V
• Low gate charge ( typical 8.3 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	SSP1N50B	Units
VDSS	Drain-Source Voltage	520	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC = 100°C)	1.5	A
		0.97	A
IDM	Drain Current - Pulsed (Note 1)	5.0	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy(Note 2)	100	mJ
IAR	Avalanche Current (Note 1)	1.5	A
EAR	Repetitive Avalanche Energy (Note 1)	3.6	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	3.5	V/ns
PD	Power Dissipation (TC= 25°C)                         - Derate above 25°C	36	W
		0.29	W/°C
TJ, Tstg	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These SSP1N50B N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.