SGU2N60UF, SGU2N60UFD, SGU6N60UF Selling Leads, Datasheet
MFG:Fairchild Package Cooled:TO D/C:07+
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SGU2N60UF, SGU2N60UFD, SGU6N60UF Datasheet download
Part Number: SGU2N60UF
MFG: Fairchild
Package Cooled: TO
D/C: 07+
MFG:Fairchild Package Cooled:TO D/C:07+
SGU2N60UF, SGU2N60UFD, SGU6N60UF Datasheet download
MFG: Fairchild
Package Cooled: TO
D/C: 07+
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PDF/DataSheet Download
Datasheet: SGU2N60UF
File Size: 504889 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGU2N60UFD
File Size: 549492 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGU6N60UF
File Size: 518939 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Symbol | Description | SGH2N60RUF | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC = 25 | 2.4 | A |
Collector Current @ TC = 100 | 1.2 | A | |
I CM(1) | Pulsed Collector Current | 10 | A |
PD | Maximum Power Dissipation @ TC = 25 | 25 | W |
Maximum Power Dissipation @ TC = 100 | 10 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Symbol | Description | SGH20N120RUFD | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC = 25 | 2.4 | A |
Collector Current @ TC = 100 | 1.2 | A | |
I CM(1) | Pulsed Collector Current | 10 | A |
IF | Diode Continuous Forward Current @ TC = 100 | 1.5 | A |
IFM | Diode Maximum Forward Current | 12 | A |
PD | Maximum Power Dissipation @ TC = 25 | 25 | W |
Maximum Power Dissipation @ TC = 100 | 10 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Symbol | Description | SGH6N60RUF | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC = 25 | 6 | A |
Collector Current @ TC = 100 | 3 | A | |
I CM(1) | Pulsed Collector Current | 25 | A |
PD | Maximum Power Dissipation @ TC = 25 | 30 | W |
Maximum Power Dissipation @ TC = 100 | 12 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |