Features: • High input impedance• High peak current capability (150A)• Easy gate drive• Surface Mount : SGR20N40L• Straight Lead : SGU20N40LApplicationStrobe flash.Specifications Symbol Description SGP23N60RUFD Units VCES Collector-Emitter Voltage 400 V ...
SGU20N40L: Features: • High input impedance• High peak current capability (150A)• Easy gate drive• Surface Mount : SGR20N40L• Straight Lead : SGU20N40LApplicationStrobe flash.Spec...
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Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2...
Symbol | Description | SGP23N60RUFD | Units |
VCES | Collector-Emitter Voltage | 400 | V |
VGES | Gate-Emitter Voltage | ±6 | V |
I CM(1) | Pulsed Collector Current | 150 | A |
PC | Maximum Power Dissipation @ TC = 25 | 45 | W |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. SGU20N40L also have wide noise immunity.
These SGU20N40L devices are very suitable for strobe applications