IGBT Transistors Dis IGBT
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Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 400 V | ||
Collector-Emitter Saturation Voltage : | 4.5 V | Maximum Gate Emitter Voltage : | +/- 6 V | ||
Continuous Collector Current at 25 C : | 150 A | Gate-Emitter Leakage Current : | +/- 0.1 uA | ||
Power Dissipation : | 45 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | DPAK-3 | Packaging : | Tube |