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Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 4 GHz.
This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2 GHz and is fabricated using the latest SiGe HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7V.
These unconditionally stable amplifiers have less than 1dB gain drift over 125℃ operating range (-40℃ to +85℃) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM and narrowband PCS bands.
SGA-1263 Maximum Ratings
Symbol
Parameters
Unit
Min.
Typ.
Max.
P1dB
Output Power at 1dB Compression
f = 850 MHz f = 1950 MHz
dBm dBm
-7.8 -7.4
S21
Small Signal Gain
f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 4000 MHz
dB dB dB
14.3
15.9 15.2 12.3
S12
Reverse Isolation
f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 4000 MHz
dB dB dB
56.3 40.6 30.8
S11
Input VSWR
f = DC - 2400 MHz f = 2400 - 4000 MHz
-
1.8:1 1.3:1
S22
Output VSWR
f = DC - 2400 MHz f = 2400 - 4000 MHz
-
1.8:1 1.9:1
IP3
Third Order Intercept Point Power out per Tone = -20 dBm
f = 850 MHz f = 1950 MHz
dBm dBm
2.6 2.8
NF
Noise Figure
f = DC - 1000 MHz f = 1000 - 2400 MHz
dB dB
2.7 2.9
TD
Group Delay
f = 1000 MHz
pS
82
VD
Device Voltage
V
2.5
2.8
3.1
SGA-1263 Features
• DC-4000 MHz Operation • Single Supply Voltage • Excellent Isolation, >50 dB at 900 MHz • 50 Ohms In/Out, Broadband Match for Operation from DC-4 GHz • Unconditionally Stable
SGA-1263 Typical Application
• Buffer Amplifier for Oscillator Applications • Broadband Gain Blocks • IF Amp