SGA1163

The SGA1163 is designed as one kind of silicon germanium HBT heterostructure bipolar transistor amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. This device is a 2-stage design that provides high isolation of up to 40 dB at 2 GHz and is fabricated using the lastest SiGe HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7 V.

Features of the SGA1163 are:(1)DC-6000 MHz operation;(2)excellent isolation, >50 dB at 900 MHz;(3)single supply voltage;(4)unconditionally stable;(5)50 Ohms in/out, broadband match for operation from DC-6 GHz. And this device can be used in buffer amplifier for oscillator applications and broadband, high isolation applications.

The absolute maximum ratings of the SGA1163 can be summarized as:(1)max. device current: 24 mA;(2)max. device voltage: 6 V;(3)max. RF input power: -9 dBm;(4)max. junction temperature: +150 ;(5)operating temperature range: -40 to +85 ;(6)max. storage temperature: +150 . If you want to know more information such as the electrical characteristics about SGA1163, please download the datasheet in www.seekic.com or www.chinaicmart.com.