SFP50N06, SFP60N03L, SFP630 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-220 D/C:08+
SFP50N06, SFP60N03L, SFP630 Datasheet download
Part Number: SFP50N06
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 08+
SFP50N06, SFP60N03L, SFP630
- Table of contents:
Info of SFP50N06
Info of SFP60N03L
Info of SFP630
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About SFP50N06
PDF/DataSheet Download
Datasheet: SFP50N06
File Size: 916664 KB
Manufacturer:
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About SFP161
PDF/DataSheet Download
Datasheet: SFP161
File Size: 171707 KB
Manufacturer: Daesan Electronics Corp.
Download : Click here to Download
About SFP161
PDF/DataSheet Download
Datasheet: SFP161
File Size: 171707 KB
Manufacturer: Daesan Electronics Corp.
Download : Click here to Download
SFP50N06 General Description
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
SFP50N06 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain to Source Voltage |
60 |
V |
|
ID |
Continuous Drain Current (@ TC=25) |
50 |
A |
| Continuous Drain Current (@ TC=100) |
35.2 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
200 |
A |
|
VGS |
Gate to Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
470 |
mJ |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
13 |
mJ |
|
IAR |
Avalnche Current (Note 1) |
50 |
A |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7 |
V/ns |
|
PD |
Total Power Dissipation (@ TC=25) |
130 |
W |
| Derating Factor above 25 °C |
0.87 |
W/°C | |
|
TSTG,TJ |
Operating Junction Temperature & Storage Temperature |
- 55 ~ 175 |
°C |
|
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C |
SFP50N06 Features
` Low RDS(on) (0.023 )@VGS=10V
` Low Gate Charge (Typical 39nC)
` Low Crss (Typical 110pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (175°C)
` Low Gate Charge (Typical 39nC)
` Low Crss (Typical 110pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (175°C)
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