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SFP840

Features: ` High ruggedness` RDS(on) (Max 0.85 )@VGS=10V` Gate Charge (Typical 48nC)` Improved dv/dt Capability, High ruggedness` 100% Avalanche Tested` Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 50...

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SeekIC No. : 004488657 Detail

SFP840: Features: ` High ruggedness` RDS(on) (Max 0.85 )@VGS=10V` Gate Charge (Typical 48nC)` Improved dv/dt Capability, High ruggedness` 100% Avalanche Tested` Maximum Junction Temperature Range (150°C)Sp...

SFP840 Data Sheet

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Part Number:
SFP840
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` High ruggedness
` RDS(on) (Max 0.85 )@VGS=10V
` Gate Charge (Typical 48nC)
` Improved dv/dt Capability, High ruggedness
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)


Specifications

Symbol
Parameter
Value
Units
VDSS

Drain to Source Voltage
500
V
ID
 Continuous Drain Current (@ TC=25)
8
A
Continuous Drain Current (@ TC=100)
5.1
A
IDM
 Drain Current Pulsed (Note 1)
32
A
VGS
 Gate to Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy (Note 2)
660
mJ
EAR
 Repetitive Avalanche Energy (Note 1)
12.5
mJ
dv/dt
 Peak Diode Recovery dv/dt (Note 3)
5
V/ns
PD
 Total Power Dissipation (@ TC=25)
125
W
Derating Factor above 25 °C
1.0
W/°C
TSTG,TJ
 Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
TL
 Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C



Description

The SFP840 is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. The SFP840 is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.


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