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S268P is a silicon PIN photodiode array in a inline configuration.
Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package.Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
S268P Maximum Ratings
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
VR
60
V
Power Dissipation
Tamb 25
PV
215
mW
Junction Temperature
Tj
100
Storage Temperature Range
Tstg
55..+100
Soldering Temperature
t 3 s, mounted on plated, printed board
Tsd
260
Thermal Resistance Junction/Ambient
RchJA
350
K/W
S268P Features
` Three photodiodes with common cathode ` Fast response times ` Small junction capacitance ` High photo sensitivity ` Large radiant sensitive area (A = 3 x 7.5 mm2) ` Wide angle of half sensitivity = ± 65 ` Suitable for visible and near infrared radiation
S268P Typical Application
High speed and high sensitive PIN photodiode array for industrial applications, measuring and control