S2600B

The S2600B is designed as one kind of high voltage, medium current silicon controlled rectifiers for switching AC and DC currents. This thyristor S2600B features an advanced unisurface construction with a multiplayer glass passivation system for improved reliability performance at high junction operating temperatures. Its dv/dt, di/dt capability and low switching losses switching, motor speed control and crowbars.

S2600B has eight features. (1)800V 125°C Tj operating. (2)High dv/dt and di/dt capability. (3)Low switching losses. (4)High pulse current capability. (5)Low forward and reverse leakage. (6)Sipos oxide glass multiplayer passivation system. (7)Advanced unisurface construction. (8)Precise ion implanted diffusion source. Those are all the main features.

Some absolute maximum ratings of S2600B have been concluded into several points as follow. (1)Its Vdrm would be 200V. (2)Its Vrrm would be 200V. (3)Its It(rms) would be 7A at Tc=65°C. (4)Its It(av) would be 4.5A at Tc=65°C and =180°. (5)Its Itsm would be 100A for 1 full cycle. (6)Its di/dt would be 200A/us. (7)Its I2t would be 40A2s at 8.3ms and would be 30A2s at 1.5ms. (8)Its PGM would be 15W for 10us max. (9)Its PG(av) would be 10W averaging time 10ms max. (10)Its storage temperature range would be from -65°C to 150°C. (11)Its operating junction temperature range would be from -65°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of S2600B are concluded as follow. (1)Its repetitive peak forward and reverse blocking current would be max 50uA for Idrom and would be max 2mA for Irrom rated Vdrm and Vrrm, gate open at Tc=125°C. (2)Its forward on state voltage would be typ 1.8V and max 2.6V. (3)Its gate trigger current DC would be typ 10mA and max 15mA. And so on. If you have any question or suggestion or want to know more information about S2600B please contact us for details. Thank you!