RZ1200, RZ1214B35Y, RZ1214B65Y Selling Leads, Datasheet
MFG:allegro Package Cooled:N/A D/C:09+
RZ1200, RZ1214B35Y, RZ1214B65Y Datasheet download
Part Number: RZ1200
MFG: allegro
Package Cooled: N/A
D/C: 09+
RZ1200, RZ1214B35Y, RZ1214B65Y
- Table of contents:
Info of RZ1200
Info of RZ1214B35Y
Info of RZ1214B65Y
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About RZ1200
PDF/DataSheet Download
Datasheet: RZ1200
File Size: 20415 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About RZ1214B35Y
PDF/DataSheet Download
Datasheet: RZ1214B35Y
File Size: 71194 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About RZ1214B65Y
PDF/DataSheet Download
Datasheet: RZ1214B65Y
File Size: 58867 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
RZ1214B35Y General Description
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.
RZ1214B35Y Maximum Ratings
In accordance with the Absolute Maximum Rating System (IEC 134).
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VCBO |
collector-base voltage | open emitter |
- |
65 |
V |
|
VCEO |
collector-emitter voltage | open base |
- |
15 |
V |
|
VCES |
collector-emitter voltage | RBE =0 |
- |
60 |
V |
|
VEBO |
emitter-base voltage | open collector |
- |
3 |
V |
|
IC |
collector current (DC) | tp 150 s; 5% |
- |
6 |
A |
|
Ptot |
total power dissipation | Tmb 75 ; tp 150 s; 5% |
- |
225 |
W |
|
Tstg |
storage temperature |
-65 |
+200 |
||
|
Tj |
operating junction temperature |
- |
200 |
||
|
Tsld |
soldering temperature | at 0.2 mm from the case; t 10 s |
- |
235 |
RZ1214B35Y Features
· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input matching ensures good stability and allows an easier design of wideband circuits.
RZ1214B35Y Typical Application
· Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.
RZ1214B65Y General Description
NPNsiliconplanarepitaxialmicrowavepowertransistorin a SOT443A metal ceramic flange package with the base connected to the flange.
RZ1214B65Y Maximum Ratings
In accordance with the Absolute Maximum Rating System (IEC 134).
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VCBO |
collector-base voltage | open emitter |
- |
65 |
V |
|
VCEO |
collector-emitter voltage | open base |
- |
15 |
V |
|
VCES |
collector-emitter voltage | RBE =0 |
- |
60 |
V |
|
VEBO |
emitter-base voltage | open collector |
- |
3 |
V |
|
IC |
collector current (DC) | tp 150 s; 5% |
- |
6 |
A |
|
Ptot |
total power dissipation | Tmb 75 °C; tp 150 s; 5% |
- |
225 |
W |
|
Tstg |
storage temperature |
-65 |
+200 |
||
|
Tj |
operating junction temperature |
- |
200 |
||
|
Tsld |
soldering temperature | at 0.2 mm from the case; t 10 s |
- |
235 |
RZ1214B65Y Features
· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output matching ensures good stability and allows an easier design of wideband circuits.
RZ1214B65Y Typical Application
· Intended for use in common base class C wideband pulsedpoweramplifiersforL-bandradarapplicationsin the 1.2 to 1.4 GHz band.
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