RZ1214B35Y Selling Leads, Price trend, RZ1214B35Y DataSheet download, circuit diagram from SeekIC.com

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of dis...

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SeekIC No. : 004480852 Detail

RZ1214B35Y: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR· Gold metallization reali...

RZ1214B35Y Data Sheet

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Part Number:: RZ1214B35Y
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Product Details

Description

Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input matching ensures good stability and allows an easier design of wideband circuits.

Application

· Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.

Specifications

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	65	V
V_CEO	collector-emitter voltage	open base	-	15	V
V_CES	collector-emitter voltage	R_BE =0	-	60	V
V_EBO	emitter-base voltage	open collector	-	3	V
I_C	collector current (DC)	t_p 150 s; 5%	-	6	A
P_tot	total power dissipation	T_mb 75 ; t_p 150 s; 5%	-	225	W
T_stg	storage temperature		-65	+200
T_j	operating junction temperature		-	200
T_sld	soldering temperature	at 0.2 mm from the case; t 10 s	-	235

Description

NPN silicon planar epitaxial microwave power transistor in a RZ1214B35Y metal ceramic flange package with the base connected to the flange.

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