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RN6003, RN6003/C, RN6006

Table of contents:
Info of RN6003
Info of RN6003/C
Info of RN6006

RN6003, RN6003/C, RN6006 Selling Leads, Datasheet

MFG:10000 Package Cooled:TOSHIBA D/C:SOT89

RN6003, RN6003/C, RN6006 Datasheet download

Five Points

Part Number: RN6003

MFG: 10000

Package Cooled: TOSHIBA

D/C: SOT89

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RN6003 General Description

The RN6003 is a kind of transistor. It is a silicon NPN epitaxial type (PCT process). It is designed for motor drive circuit applications, power amplifier applications and power switching applications. There are some features as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)small flat package; (5)PC=1 to 2 W (mounted on ceramic substrate); (6)complementary to RN5003.

What comes next is about the maximum ratings (Ta=25). (1)collector-base voltage, VCBO: -30 V; (2)collector-emitter voltage, VCES: -30 V; (3)emitter-base voltage, VEBO: -5 V; (4)collector current, IC: -2 A; (5)base current, IB: -0.4 A; (6)collector power dissipation, PC: 500 mW and 1000 mW mounted on ceramic substrate; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics (Ta=25): (1)collector cut-off current, ICBO: -0.1A max at VCB=-30 V, IE=0; (2)emitter cut-off current, IEBO: -0.385 mA min, -0.50 mA typ and -714 mA max at VEB=-5 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CES: -30 V min at IC=-10 mA;(4)DC current gain, hFE: 100 min and 400 max at VCE=-2 V, IC=-0.5 A; 30 min at VCE=-2 V, IC=-2.0 A; (5)collector-emitter saturation voltage, VCE(sat): -0.5 V max at IC=-1 A, IB=-0.05 A; (6)base-emitter saturation voltage, VBE(sat): -1.2 V max at IC=-1 A, IB=-0.05 A; (7)transition frequency, fT: 120 MHz typ at VCE=-2 V, IC=-0.5 A; (8)collector output capacitance, Cob: 40 pF typ at VCB=-10 V, IE=0, f=1 MHz; (9)resistor, R: 7k min, 10k typ and 13k max.

RN6006 Maximum Ratings

Characteristic		Symbol	Rating	Unit
Collector-base voltage		V_CBO	-10	V
Collector-emitter voltage		V_CEO	-10	V
Emitter-base voltage		V_EBO	-6	V
Collector current	DC	I_C	-2	A
Collector current	Pulse (Note1)	I_C	-4	A
Base current		I_B	-0.4	A
Collector power dissipation		P_C	500	mW
Collector power dissipation		P_C *	1000	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	−55~150

Note: Pulse width 10ms, duty cycle 30 %
* : Mounterd on ceramic substrate (250mm² * 0.8t)

RN6006 Features

·With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·Small flat package
·PC = 1~2W (mounted on ceramic substrate)
·Complementary to RN5006

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