RN6002

The RN6002 is a kind of transistor. It is a silicon NPN epitaxial type (PCT process). RN6002 is designed for motor drive circuit applications, power amplifier applications and power switching applications. There are some features as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)small flat package; (5)PC=1 to 2 W (mounted on ceramic substrate); (6)complementary to RN5002.

What comes next is about the maximum ratings of RN6002 (Ta=25). (1)collector-base voltage, VCBO: -30 V; (2)collector-emitter voltage, VCES: -30 V; (3)emitter-base voltage, VEBO: -5 V; (4)collector current, IC: -2 A; (5)base current, IB: -0.4 A; (6)collector power dissipation, PC: 500 mW and 1000 mW mounted on ceramic substrate; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics of RN6002 (Ta=25): (1)collector cut-off current, ICBO: -0.1A max at VCB=-30 V, IE=0; (2)emitter cut-off current, IEBO: -0.69 mA min, -0.89 mA typ and -1.28 mA max at VEB=-5 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CES: -30 V min at IC=-10 mA;(4)DC current gain, hFE: 100 min and 360 max at VCE=-2 V, IC=-0.5 A; 50 min at VCE=-2 V, IC=-2.0 A; (5)collector-emitter saturation voltage, VCE(sat): -0.5 V max at IC=-1 A, IB=-0.05 A; (6)base-emitter saturation voltage, VBE(sat): -1.2 V max at IC=-1 A, IB=-0.05 A; (7)transition frequency, fT: 120 MHz typ at VCE=-2 V, IC=-0.5 A; (8)collector output capacitance, Cob: 40 pF typ at VCB=-10 V, IE=0, f=1 MHz; (9)resistor, R: 3.9k min, 5.6k typ and 7.3k max.