RMLS8103, RMM2080, RMM-5201 Selling Leads, Datasheet
MFG:AGILENT Package Cooled:N/A D/C:09+
RMLS8103, RMM2080, RMM-5201 Datasheet download
Part Number: RMLS8103
MFG: AGILENT
Package Cooled: N/A
D/C: 09+
RMLS8103, RMM2080, RMM-5201
- Table of contents:
Info of RMLS8103
Info of RMM2080
Info of RMM-5201
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About RMLA3565-58
PDF/DataSheet Download
Datasheet: RMLA3565-58
File Size: 357468 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About RMM2080
PDF/DataSheet Download
Datasheet: RMM2080
File Size: 206465 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About RMM2080
PDF/DataSheet Download
Datasheet: RMM2080
File Size: 206465 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
RMM2080 General Description
The Fairchild Semiconductor's RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-m gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4- cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125m & 4x250m). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500m). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.
RMM2080 Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| Vd | Positive DC Voltage (+7V Typ) | +6 | V |
| Vg | Negative DC Voltage | -2 | V |
| Vdg | Simultaneous (VdVg) | 10 | V |
| ID | Positive DC Current | 400 | mA |
| PIN(CW) |
RF Input Power (from 50 source) |
+8 | dBm |
| TCASE |
Operating Baseplate Temperature | -30 to +85 | |
| TSTORAGE |
Storage Temperature Range | -55 to +125 | |
| RJC | Thermal Resistance (Channel to Backside) | 22 | /W |
RMM2080 Features
• 218GHz Bandwidth
• 24dB Typical Gain
• ±2dB Gain Flatness
• 20dBm Output Power Typical
• Three Stages of Distributed Amplification
• Gain Control of up to 70dB range
• Dual-Gate Ion-Implanted 0.5m FETs
• Chip Size: 4.14mm x 3.22mm x 0.1mm
• 24dB Typical Gain
• ±2dB Gain Flatness
• 20dBm Output Power Typical
• Three Stages of Distributed Amplification
• Gain Control of up to 70dB range
• Dual-Gate Ion-Implanted 0.5m FETs
• Chip Size: 4.14mm x 3.22mm x 0.1mm
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