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RMM2080

Features: • 218GHz Bandwidth• 24dB Typical Gain• ±2dB Gain Flatness• 20dBm Output Power Typical• Three Stages of Distributed Amplification• Gain Control of up to 70dB range• Dual-Gate Ion-Implanted 0.5m FETs• Chip Size: 4.14mm x 3.22mm x 0.1mmSpecifi...

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SeekIC No. : 004478012 Detail

RMM2080: Features: • 218GHz Bandwidth• 24dB Typical Gain• ±2dB Gain Flatness• 20dBm Output Power Typical• Three Stages of Distributed Amplification• Gain Control of up to ...

RMM2080 Data Sheet

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Part Number:
RMM2080
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 218GHz Bandwidth
• 24dB Typical Gain
• ±2dB Gain Flatness
• 20dBm Output Power Typical
• Three Stages of Distributed Amplification
• Gain Control of up to 70dB range
• Dual-Gate Ion-Implanted 0.5m FETs
• Chip Size: 4.14mm x 3.22mm x 0.1mm


Specifications

Symbol Parameter Ratings Units
Vd Positive DC Voltage (+7V Typ) +6 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (VdVg) 10 V
ID Positive DC Current 400 mA
PIN(CW)

 RF Input Power (from 50 source)
 +8 dBm
TCASE
 Operating Baseplate Temperature -30 to +85
TSTORAGE
 Storage Temperature Range -55 to +125
RJC Thermal Resistance (Channel to Backside) 22 /W



Description

The Fairchild Semiconductor's RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-m gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4- cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125m & 4x250m). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500m). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.




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