MFG:Intersil/FAIRCHILD Package Cooled:7850 D/C:02+
RLD03N06CLE, RLD03N06CLESM, RLD06P075B Datasheet download
MFG: Intersil/FAIRCHILD
Package Cooled: 7850
D/C: 02+
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Datasheet: RLD03N06CLE
File Size: 95686 KB
Manufacturer: INTERSIL [Intersil Corporation]
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PDF/DataSheet Download
Datasheet: RLD03N06CLESM
File Size: 95686 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RLD06P075B
File Size: 96600 KB
Manufacturer: Littelfuse
Download : Click here to Download
Temperature Dependence of Current Limiting and
Switching Speed Performance
The RLD03N06CLE, CLESM and RLP03N06CLE are monolithic power devices which incorporate a Logic Level power MOSFET transistor with a current sensing scheme and control circuitry to enable the device to self limit the drain source current flow. The current sensing scheme supplies current to a resistor that is connected across the base to emitter of a bipolar transistor in the control section. The collector of this bipolar transistor is connected to the gate of the power MOSFET transistor. When the ratiometric current from the current sensing reaches the value required to forward bias the base emitter junction of this bipolar transistor, the bipolar "turns on". A resistor is incorporated in series with the gate of the power MOSFET transistor allowing the bipolar transistor to adjust the drive on the gate of the power MOSFET transistor to a voltage which then maintains a constant current in the power MOSFET transistor. Since both the
ratiometric current sensing scheme and the base emitter unction voltage of the bipolar transistor vary with temperature, the current at which the device limits is a function of temperature. This dependence is shown in Figure 3.
The resistor in series with the gate of the power MOSFET transistor also results in much slower switching performance than in standard power MOSFET transistors. This is an advantage where fast switching can cause EMI or RFI. The switching speed is very predictable.
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS 60 V
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . .VGS +5.5 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Self Limited
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 30 W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W /
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . .ESD 2 KV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
• 0.30A, 60V
• rDS(ON) = 6.0W
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150
• Built in Voltage Clamp
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
• Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Temperature Dependence of Current Limiting and
Switching Speed Performance
The RLD03N06CLE, CLESM and RLP03N06CLE are monolithic power devices which incorporate a Logic Level power MOSFET transistor with a current sensing scheme and control circuitry to enable the device to self limit the drain source current flow. The current sensing scheme supplies current to a resistor that is connected across the base to emitter of a bipolar transistor in the control section. The collector of this bipolar transistor is connected to the gate of the power MOSFET transistor. When the ratiometric current from the current sensing reaches the value required to forward bias the base emitter junction of this bipolar transistor, the bipolar "turns on". A resistor is incorporated in series with the gate of the power MOSFET transistor allowing the bipolar transistor to adjust the drive on the gate of the power MOSFET transistor to a voltage which then maintains a constant current in the power MOSFET transistor. Since both the
ratiometric current sensing scheme and the base emitter unction voltage of the bipolar transistor vary with temperature, the current at which the device limits is a function of temperature. This dependence is shown in Figure 3.
The resistor in series with the gate of the power MOSFET transistor also results in much slower switching performance than in standard power MOSFET transistors. This is an advantage where fast switching can cause EMI or RFI. The switching speed is very predictable.
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS 60 V
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . .VGS +5.5 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Self Limited
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 30 W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W /
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . .ESD 2 KV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
• 0.30A, 60V
• rDS(ON) = 6.0W
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150
• Built in Voltage Clamp
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
• Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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