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RLD2WMUV2

Features: Optimization of a strained multi quantum well realizes the reduction in threshold current, and the good temperature characteristic. Low threshold current. 785nm : 18mA (Tc=25°C) 655nm : 20mA (Tc=25°C)Low noise is realized by high frequency modulation (BU9369FVM)element.Emission point dis...

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SeekIC No. : 004477642 Detail

RLD2WMUV2: Features: Optimization of a strained multi quantum well realizes the reduction in threshold current, and the good temperature characteristic. Low threshold current. 785nm : 18mA (Tc=25°C) 655nm : 20...

RLD2WMUV2 Data Sheet

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Part Number:
RLD2WMUV2
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

 Optimization of a strained multi quantum well realizes the reduction in threshold current, and the good temperature characteristic.
Low threshold current.
    785nm : 18mA (Tc=25°C)
    655nm : 20mA (Tc=25°C)
 Low noise is realized by high frequency modulation (BU9369FVM)element.
 Emission point distance : 110m




Specifications

Parameter Symbol Limits Unit
Output PO 7 mW
Reverse
voltage		 Laser VR 2 V
PIN photodiode VR(PIN) 30 V
Operating temperature Topr −10 to +70
Storage temperature Tstg −40 to +85



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