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RIC25C160-S, RIC7113E4, RIC7113L4

RIC25C160-S, RIC7113E4, RIC7113L4 Selling Leads, Datasheet

MFG:1339  Package Cooled:06+  D/C:2008+

RIC25C160-S, RIC7113E4, RIC7113L4 Picture

RIC25C160-S, RIC7113E4, RIC7113L4 Datasheet download

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Part Number: RIC25C160-S

 

MFG: 1339

Package Cooled: 06+

D/C: 2008+

 

 

 
 
 
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About RIC7113

PDF/DataSheet Download

Datasheet: RIC7113

File Size: 2886426 KB

Manufacturer: International Rectifier

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RIC7113E4 Suppliers

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  • RIC7113E4

  • Vendor: IR D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-12-19
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)

About RIC7113E4

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Datasheet: RIC7113E4

File Size: 179988 KB

Manufacturer: IRF [International Rectifier]

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  • RIC7113L4

  • Vendor: IR D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-12-19
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)

About RIC7113L4

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Datasheet: RIC7113L4

File Size: 156746 KB

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RIC7113E4 General Description

The RIC7113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.

RIC7113E4 Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.

Symbol
Parameter
Min.
Max.
Units
VB
High Side Floating Supply Voltage
-0.5
VS+20
V
VS
High Side Floating Supply Offset Voltage
-
400
VHO
High Side Floating Output Voltage
VS-0.5
VB+0.5
VCC
Low Side Fixed Supply Voltage
-0.5
20
VLO
Low Side Output Voltage
-0.5
VCC + 0.5
VDD
Logic Supply Voltage
-0.5
VSS + 20
VSS
Logic Supply Offset Voltage
VCC-20
VCC + 0.5
VIN
Logic Input Voltage (HIN, LIN & SD)
VSS-0.5
VDD + 0.5
dVS/dt
Allowable Offset Supply Voltage Transient (Figure 2)
-
50
V/ns
PD
Package Power Dissipation @ TA +25°C
-
1.6
W
RthJA
Thermal Resistance, Junction to Ambient
-
125
/W
TJ
Junction Temperature
-55
125
TS
Storage Temperature
-55
150
TL
Lead Temperature (Soldering, 10 seconds)
-
300
Weight
0.42 (typical)
g

RIC7113E4 Features

· Total dose capability to 100K Rad (Si)
· Floating channel designed for bootstrap operation
· Fully operational to +400V
· Tolerant to negative transient voltage
· dV/dt immune
· Gate drive supply range from 10 to 20V
· Undervoltage lockout for both channels
· Separate logic supply range from 5 to 20V  Logic and power ground ±5V offset
· CMOS Schmitt-triggered inputs with pull-down
· Cycle by cycle edge-triggered shutdown logic
· Matched propagation delay for both channels
· Outputs in phase with inputs
· Hermetically Sealed
· Lightweight

RIC7113L4 General Description

The RIC7113L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.

RIC7113L4 Maximum Ratings

Symbol Parameter Min. Max. Units
VB High Side Floating Supply Voltage -0.5 VS + 20 V
VS High Side Floating Supply Offset Voltage   400 V
VHO High Side Floating Output Voltage VS - 0.5 VB + 0.5 V
VCC Low Side Fixed Supply Voltage -0.5 20 V
VLO Low Side Output Voltage -0.5 VCC + 0.5 V
VDD Logic Supply Voltage -0.5 VSS + 20 V
VSS Logic Supply Offset Voltage VCC - 20 VCC + 0.5 V
VIN Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 VDD + 0.5 V
dVs/dt Allowable Offset Supply Voltage Transient (Figure 2)   50 V/ns
PD Package Power Dissipation @ TA £ +25°C   1.6 W
RthJA Thermal Resistance, Junction to Ambient   125 °C/W
TJ Junction Temperature -55 125 °C
TS Storage Temperature -55 150 °C
TL Lead Temperature (Soldering, 10 seconds)   300 °C
  Weight     g

RIC7113L4 Features

· Total dose capability to 100K Rad (Si)
· Floating channel designed for bootstrap operation
· Fully operational to +400V
· Tolerant to negative transient voltage
· dV/dt immune
· Gate drive supply range from 10 to 20V
· Undervoltage lockout for both channels
· Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
· CMOS Schmitt-triggered inputs with pull-down
· Cycle by cycle edge-triggered shutdown logic
· Matched propagation delay for both channels
· Outputs in phase with inputs
· Hermetically Sealed
· Lightweight

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