Features: · Total dose capability to 100K Rad (Si)· Floating channel designed for bootstrap operation· Fully operational to +400V· Tolerant to negative transient voltage· dV/dt immune· Gate drive supply range from 10 to 20V· Undervoltage lockout for both channels· Separate logic supply range from ...
RIC7113A4: Features: · Total dose capability to 100K Rad (Si)· Floating channel designed for bootstrap operation· Fully operational to +400V· Tolerant to negative transient voltage· dV/dt immune· Gate drive su...
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Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol |
Parameter |
Min. |
Max. |
Units |
VB |
High Side Floating Supply Voltage |
-0.5 |
VS+20 |
V |
VS |
High Side Floating Supply Offset Voltage |
- |
400 | |
VHO |
High Side Floating Output Voltage |
VS-0.5 |
VB+0.5 | |
VCC |
Low Side Fixed Supply Voltage |
-0.5 |
20 | |
VLO |
Low Side Output Voltage |
-0.5 |
VCC + 0.5 | |
VDD |
Logic Supply Voltage |
-0.5 |
VSS + 20 | |
VSS |
Logic Supply Offset Voltage |
VCC-20 |
VCC + 0.5 | |
VIN |
Logic Input Voltage (HIN, LIN & SD) |
VSS-0.5 |
VDD + 0.5 | |
dVS/dt |
Allowable Offset Supply Voltage Transient (Figure 2) |
- |
50 |
V/ns |
PD |
Package Power Dissipation @ TA +25°C |
- |
0.6 |
W |
RthJA |
Thermal Resistance, Junction to Ambient |
- |
210 |
/W |
TJ |
Junction Temperature |
-55 |
125 |
|
TS |
Storage Temperature |
-55 |
150 | |
TL |
Lead Temperature (Soldering, 10 seconds) |
- |
300 | |
Weight |
0.6(typical)
|
g |
The RIC7113A4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.