RD70FM-T1, RD70HHF1, RD70HHF1-01 Selling Leads, Datasheet
MFG:NEC Package Cooled:1808 D/C:07
RD70FM-T1, RD70HHF1, RD70HHF1-01 Datasheet download
Part Number: RD70FM-T1
MFG: NEC
Package Cooled: 1808
D/C: 07
RD70FM-T1, RD70HHF1, RD70HHF1-01
- Table of contents:
Info of RD70FM-T1
Info of RD70HHF1
Info of RD70HHF1-01
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About RD7.5E
PDF/DataSheet Download
Datasheet: RD7.5E
File Size: 97493 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About RD70HHF1
PDF/DataSheet Download
Datasheet: RD70HHF1
File Size: 186015 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About RD7.5E
PDF/DataSheet Download
Datasheet: RD7.5E
File Size: 97493 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
RD70HHF1 General Description
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
RD70HHF1 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | RATINGS | UNIT |
| VDSS | Drain to source voltage | Vgs=0V | 50 | V |
| VGSS | Gate to source voltage | Vds=0V | +/-20 | V |
| Pch | Channel dissipation | Tc=25 | 150 | W |
| Pin | Input power | Zg=Zl=50 | 5 | W |
| ID | Drain current | 20 | A | |
| Tch | Channel Temperature | 175 | ||
| Tstg | Storage temperature | -40 to +175 | ||
| R th j-c | Thermal resistance | junction to case | 1.0 | /W |
Note 1: Above parameters are guaranteed independently.
RD70HHF1 Features
•High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
•High Efficiency: 60%typ.on HF Band
RD70HHF1 Typical Application
For output stage of high power amplifiers in HF Band mobile radio sets.
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