RD70HHF1 Selling Leads, Price trend, RD70HHF1 DataSheet download, circuit diagram from SeekIC.com

Features: •High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz•High Efficiency: 60%typ.on HF BandApplicationFor output stage of high power amplifiers in HF Band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source ...

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SeekIC No. : 004475721 Detail

RD70HHF1: Features: •High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz•High Efficiency: 60%typ.on HF BandApplicationFor output stage of high power amplifiers in HF Band mobile r...

RD70HHF1 Data Sheet

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Part Number:: RD70HHF1
Supply Ability:: 5000

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Upload time: 2024/12/19

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Product Details

Description

Features:

•High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band

Application

For output stage of high power amplifiers in HF Band mobile radio sets.

Specifications

SYMBOL	PARAMETER	CONDITIONS	RATINGS	UNIT
V_DSS	Drain to source voltage	Vgs=0V	50	V
V_GSS	Gate to source voltage	Vds=0V	+/-20	V
P_ch	Channel dissipation	Tc=25	150	W
P_in	Input power	Zg=Zl=50	5	W
I_D	Drain current		20	A
T_ch	Channel Temperature		175
T_stg	Storage temperature		-40 to +175
R _{th j-c}	Thermal resistance	junction to case	1.0	/W

Note 1: Above parameters are guaranteed independently.

Description

RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

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RD70HHF1

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