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R1004, R1006, R1007

Table of contents:
Info of R1004
Info of R1006
Info of R1007

R1004, R1006, R1007 Selling Leads, Datasheet

Package Cooled:TO-92 D/C:09+

R1004, R1006, R1007 Datasheet download

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Part Number: R1004

MFG: --

Package Cooled: TO-92

D/C: 09+

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R1004 General Description

Mimix Broadband's 30.0-46.0 GHz GaAs MMIC receiver has a noise figure of 3.5 dB and 18.0 dB image rejection across the band. This device is a three stage LNA followed by an image reject resistive pHEMT mixer and includes an integrated LO doubler and LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of integrated LO doubler and LO buffer amplifier makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

R1004 Maximum Ratings

Supply Voltage (Vd) ...........+6.0 VDC
Supply Current (Id1,2), (Id3)..... 110, 180 mA
Gate Bias Voltage (Vg)..........+0.3 VDC
Input Power (RF Pin) ............+5 dBm
Storage Temperature (Tstg) .....-65 to +165
Operating Temperature (Ta) ..-55 to MTTF Table ³
Channel Temperature (Tch) ......MTTF Table^{3

(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.}

R1004 Features

·Sub-harmonic Receiver
·Integrated LNA, LO Doubler/Buffer, Image Reject Mixer
·+4.0 dBm Input Third Order Intercept (IIP3)
·+2.0 dBm LO Drive Level
·9.0 dB Conversion Gain
·3.5 dB Noise Figure
·18.0 dB Image Rejection
·100% On-Wafer RF, DC and Noise Figure Testing
·100% Visual Inspection to MIL-STD-883 Method 2010

R1006 General Description

Mimix Broadband's 18.0-25.0 GHz GaAs MMIC receiver has a noise figure of 2.5 dB and 15.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject subharmonicanti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

R1006 Maximum Ratings

Supply Voltage (Vd)	+4.5 VDC
Supply Current (Id1,Id2)	180, 165 mA
Gate Bias Voltage (Vg)	+0.3 VDC
Input Power (RF Pin)	0.0 dBm
Input Power (RF Pin)	-65 to +165
Operating Temperature (Ta)	-55 to MTTF Table³
Channel Temperature (Tch)	MTTF Table³

(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low
as possible for maximum life.

R1006 Features

·Sub-harmonic Receiver
·Integrated LNA, LO Buffer, Image Reject Mixer
·+2.0 dBm LO Drive Level
·2.5 dB Noise Figure
·15.0 dB Image Rejection
·100% On-Wafer RF, DC and Noise Figure Testing
·100% Visual Inspection to MIL-STD-883 Method 2010

R1007 General Description

Mimix Broadband's 11.0-17.0 GHz GaAs MMIC receiver has a noise figure of 2.2 dB and 20.0 dB image rejection across the band. This device is a three stage LNA followed by an image reject resistive pHEMT mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

R1007 Maximum Ratings

Supply Voltage (Vd)	+6.0 VDC
Supply Current (Id1), (Id3)	250, 200 mA
Gate Bias Voltage (Vg)	+0.3 VDC
Input Power (RF Pin)	+17 dBm
Storage Temperature (Tstg)	-65 to +165 ^OC
Operating Temperature (Ta)	-55 to MTTF Table ³
Junction Temperature (Tch)	MTTF Table ³

(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.

R1007 Features

·Fully Integrated Design
·2.2 dB Noise Figure
·13.5 dB Conversion Gain
·20 dB Image Rejection
·+4 dBm IIP3
·+3 dBm LO drive Level
·100% On-Wafer RF, DC and Noise Figure Testing
·100% Visual Inspection to MIL-STD-883 Method 2010

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