Features: · Fundamental High Dynamic Range Receiver· Integrated Gain Control· +4.0 dBm Input Third Order Intercept (IIP3)· 14.0 dB Conversion Gain· 3.0 dB Noise Figure· 25.0 dB Image Rejection· 100% On-Wafer RF, DC and Noise Figure Testing· 100% Visual Inspection to MIL-STD-883 Method 2010Specific...
R1002: Features: · Fundamental High Dynamic Range Receiver· Integrated Gain Control· +4.0 dBm Input Third Order Intercept (IIP3)· 14.0 dB Conversion Gain· 3.0 dB Noise Figure· 25.0 dB Image Rejection· 100%...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 300 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (RF Pin) | 0.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table3 |
Channel Temperature (Tch) | MTTF Table3 |
Mimix Broadband's 18.0-34.0 GHz GaAs MMIC receiver has a 12.0 dB gain control range, a noise figure of 3.0 dB and 25.0 dB image rejection across the band. The R1002 is a three stage LNA followed by a single transistor "Tee" attenuator and an image reject fundamental resistive HEMT mixer. At high signal levels the radio AGC system can be used to reduce the receiver gain improving the IIP3 providing for minimum distortion at modulation schemes as high as 256 QAM (ETSI-see Technical Note 1). The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The R1002 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.