PH1214-12M, PH1214-20EL, PH1214-25EL Selling Leads, Datasheet
MFG:MA-COM Package Cooled:TRANSISTOR D/C:N/A
PH1214-12M, PH1214-20EL, PH1214-25EL Datasheet download
Part Number: PH1214-12M
MFG: MA-COM
Package Cooled: TRANSISTOR
D/C: N/A
PH1214-12M, PH1214-20EL, PH1214-25EL
- Table of contents:
Info of PH1214-12M
Info of PH1214-20EL
Info of PH1214-25EL
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About PH1214-12M
PDF/DataSheet Download
Datasheet: PH1214-12M
File Size: 62571 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
About PH100F24
PDF/DataSheet Download
Datasheet: PH100F24
File Size: 98343 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About PH100F24
PDF/DataSheet Download
Datasheet: PH100F24
File Size: 98343 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PH1214-12M General Description
M/A-COM's PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radar's such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-12M can produce 12 watts of output power with medium pulse length (150S) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
PH1214-12M Maximum Ratings
| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 60 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC | 1.3 | A |
| Total Power Dissipation @ +25 | PTOT | 40 | W |
| Storage Temperature | Tstg | -65 to +200 | |
| Junction Temperature | Tj | 200 |
PH1214-12M Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
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