PH102

The PH102 is designed as one kind of miniature NPN silicon phototransistor that has exceptionaily stable characteristics mounted in a two-terminal microdisk package. The packaging of this unit permits close-spacing in linear arrays. Features of this device are:(1)high speed;(2)low cost;(3)low leakage current;(4)wide spectral response;(5)compact, rugged, light weight;(6)high sensitivity.

The absolute maximum ratings of the PH102 can be summarized as:(1)maximum collector to emitter voltage: 30 V;(2)maximum power dissipation: 100 mW;(3)junction temperature: 80 ;(6)storage temperature: -30 to +80 ;(7)collector current: 40 mA. And this device can be used in wide range of applications such as motor gover, level control, tape and card reader sensor and intrusion alarm applications.

The electrical characteristics of PH102 can be summarized as:(1)dark current: 200 nA;(2)collector saturation voltage: 0.3 V;(3)rise time: 5 us;(4)fall time: 5 us;(5)photo current: 50 to 180 uA. If you want to know more information about the PH102, please download the datasheet in www.seekic.com or www.chinaicmart.com .