PH1020-190

PH1012-190 is a type of avionics pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration.The third one is it is high efficiency interdigitated geometry. The forth one is diffused emitter ballasting resistors. The fifth one is gold matallization system. The sixth one is hermatic metal/ceramic package.The seventh one is internal input and output impedance matching.The eighth one is broadband class C operation.
 
There are some absolute maximum ratings about PH1012-190.Collector-emitter votlage(V_CES) is 65 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 65 V min when Ic is 100 mA. Collector-emitter leakage current(I_CES) is 20 mA max when V_CE is 40 V.Input power(Pin) is 63 W max when Vcc is 33 V,P_out is 190 W, F is 1025,1090,1150 MHz, N1.Power gian(Gp) is 4.8 dB min when Vcc is 33 V,P_out is 190 W, F is 1025,1090,1150 MHz, N1. Collector efficiency is 30% min when Vcc is 33 V,Pout is 190 W, F is 1025,1090,1150 MHz, N1.Input return loss is 10 dB min when Vcc is 33 V,Pout is 190 W, F is 1025,1090,1150 MHz, N1.Load mismatch tolerance is 5:1 typ when Vcc is 33 V,P_out is 190 W, F is 1025,1090,1150 MHz, N1.

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