PE4261, PE4263, PE42641 Selling Leads, Datasheet
MFG:PEREGRINE Package Cooled:55 D/C:06+/07+
PE4261, PE4263, PE42641 Datasheet download
Part Number: PE4261
MFG: PEREGRINE
Package Cooled: 55
D/C: 06+/07+
MFG:PEREGRINE Package Cooled:55 D/C:06+/07+
PE4261, PE4263, PE42641 Datasheet download
MFG: PEREGRINE
Package Cooled: 55
D/C: 06+/07+
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PDF/DataSheet Download
Datasheet: PE4261
File Size: 160973 KB
Manufacturer: PEREGRINE
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PE4263
File Size: 225744 KB
Manufacturer: PEREGRINE
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PE40F120
File Size: 120752 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
Symbol |
Parameter/Conditions |
Min |
Max |
Units |
VDD |
Supply voltage |
-0.3 |
4.0 |
V |
VI |
Voltage on any input |
-0.3 |
VDD + 0.3 |
V |
TST |
Storage temperature range |
-65 |
+150 |
°C |
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Operating temperature range |
-40 |
+85 |
°C |
PIN |
TX input power (50 ) |
+38 |
dBm | |
RX input power (50 ) |
+23 | |||
PIN(:1) |
TX input power (VSWR = (:1)5,6 824-915 MHz |
+35 |
dBm | |
TX input power (VSWR = (:1)5,6 1710-1910 MHz |
+33 | |||
VESD4 |
ESD Voltage (HBM, MIL_STD 883 Method 3015.7) |
1500 |
V | |
ESD Voltage (MM, JEDEC, JESD22-A114-B) |
100 |
V | ||
ESD Voltage (CDM, JEDEC, JESD22-A114-B) |
1500 |
V | ||
ESD Voltage (IEC 61000-4-2, ANT port) |
2000 |
V |
The PE42641 is a HaRP™-enhanced SP4T RF Switch developed on the UltraCMOS™ process technology. This switch contains 4 identical WEDGE/CDMA compliant TX paths and can be used in various GSM and WCDMA mobile applications as well as other wireless applications up to 3000MHz. It is also suitable for antenna band switching and switchable matching networks for cellular and non-cellular mobile applications. It integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface and requires no DC blocking capacitors. This RoHS-compliant part is available in a standard 3x3x0.75mm QFN package.
Peregrine's HaRP™ technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS™ process, providing performance superior to GaAs with the economy and integration of conventional CMOS.
Symbol | Parameter/ConditioMinns | Min | Max | Units |
VDD | Power supply voltage | -0.3 | 4.0 | V |
VI | Voltage on any DC input | -0.3 | VDD+0.3 | V |
TST | Storage temperature range | -65 | +150 | |
PIN(50 ) | RF input power (50 ) 3,4 824-915 MHz | +38 | dBm | |
RF input power (50 ) 3,4 1710-1910 MHz | +36 | |||
PIN (:1) | RF input power (VSWR = (:1)3,4 824-915 MHz | +35 | dBm | |
RF input power (VSWR = (:1)3,4 1710-1910 MHz | +33 | |||
VESD 5 | ESD Voltage, ANT pin | 4000 | V | |
ESD Voltage, all pins | 2000 | V |