PE4126

Features: • Integrated, single-ended RF & LO interfaces• High linearity: IIP3 of +32 dBm, 1700 - 1800 MHz (+17 dBm LO)• Low conversion loss: 7.9 dB (+17 dBm LO)• High Isolation: typical LO-IF at 37 dB, LO-RF at 38 dB (1.8 GHz)• Designed for low-side LO injectionPi...

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PE4126 Picture
SeekIC No. : 004457792 Detail

PE4126: Features: • Integrated, single-ended RF & LO interfaces• High linearity: IIP3 of +32 dBm, 1700 - 1800 MHz (+17 dBm LO)• Low conversion loss: 7.9 dB (+17 dBm LO)• High Iso...

floor Price/Ceiling Price

Part Number:
PE4126
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Integrated, single-ended RF & LO interfaces
• High linearity: IIP3 of +32 dBm, 1700 - 1800 MHz (+17 dBm LO)
• Low conversion loss: 7.9 dB (+17 dBm LO)
• High Isolation: typical LO-IF at 37 dB, LO-RF at 38 dB (1.8 GHz)
• Designed for low-side LO injection



Pinout

  Connection Diagram


Specifications

Symbol Parameter/Conditions Min Max Units
TST Storage temperature range -65 150 °C
TOP Operating temperature range -40 85 °C
PLO LO input power   20 dBm
PRF RF input power   16 dBm
VESD ESD Sensitive Device   250 V



Description

The PE4126 is a high linearity, passive Quad MOSFET Mixer for DCS 1800 Base Station Receivers exhibiting high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer PE4126 integrates passive matching networks to provide single-ended interfaces for the RF and LO ports, eliminating the need for external RF baluns or matching networks. The PE4126 is optimized for frequency down-conversion using low-side LO injection for DCS 1800 Base Station applications, and is also suitable for use in up-conversion applications.

The PE4126 is manufactured on Peregrine's UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.




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