MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:PowerSO-10 D/C:0711+
PD55008S-E, PD55015-E, PD55015S Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: PowerSO-10
D/C: 0711+
Description: IC TRANS RF PWR LDMOST PWRSO-10
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PDF/DataSheet Download
Datasheet: PD500
File Size: 118056 KB
Manufacturer: ANADIGICS, Inc
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PD500
File Size: 118056 KB
Manufacturer: ANADIGICS, Inc
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PD55015S
File Size: 123081 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | PD55008S-E |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 40V |
| Current Rating | 2.5A |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PD55008S E PD55008SE 497 5300 5 ND 49753005ND 497-5300-5 |
| Technical/Catalog Information | PD55015-E |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 40V |
| Current Rating | 5A |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PD55015 E PD55015E 497 6715 5 ND 49767155ND 497-6715-5 |
The PD55015 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent gain, linearity and reliability of ST's latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55015's su-perior linearity performance makes it an ideal so-lution for car mobile radio.
The PowerSO-10 plastic package, designed toof-fer high reliability, is the first ST JEDECapproved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease ofassembly.
|
Symbol |
Parameter |
Value |
Unit |
|
V(BR)DSS |
Drain-Source Voltage |
40 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current |
5 |
A |
|
PDISS |
Power Dissipation (@ Tc = 70) |
73 |
W |
|
Tj |
Max. Operating Junction Temperature |
165 |
|
|
TSTG |
Storage Temperature |
-65 to +150 |
|
· EXCELLENT THERMAL STABILITY
· COMMON SOURCE CONFIGURATION
· POUT = 15 W with13.5 dB gain @ 500 MHz/12.5V
· NEW RF PLASTIC PACKAGE
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