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PD55003L E PD55003LE 497 6472 6 ND 49764726ND 497-6472-6
PD55003S General Description
The PD55003 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent gain,linearity and reliability of ST's latest LDMOS tech-nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003's su-perior linearity performance makes it an ideal so-lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
PD55003S Maximum Ratings
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
2.5
A
PDISS
Power Dissipation (@ Tc = 70)
31.7
W
Tj
Max. Operating Junction Temperature
165
TSTG
Storage Temperature
-65 to +150
PD55003S Features
· EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V · NEW RF PLASTIC PACKAGE
PD55008 General Description
The PD55008 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common source mode at frequencies of up to 1GHz. PD55008 boasts the excellent gain,linearity and reliability of ST's latest LDMOS tech-nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's su-perior linearity performance makes it an ideal so-lution for car mobile radio.
The PowerSO-10 plastic package, designed toof- fer high reliability, is the first ST JEDECapproved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease ofassembly.
PD55008 Maximum Ratings
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
4
A
PDISS
Power Dissipation (@ Tc = 70)
52.8
W
Tj
Max. Operating Junction Temperature
165
TSTG
Storage Temperature
-65 to +150
PD55008 Features
· EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 8 W with 17 dB gain @ 500 MHz /12.5V · NEW RF PLASTIC PACKAGE