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This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.
NZQA6V8XV5T1 Maximum Ratings
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ TA = 25°C) (Note 1)
PPK
100
W
Steady State Power - 1 Diode (Note 2)
PD
300
mW
Thermal Resistance Junction to Ambient Above 25°C, Derate
RJA
370 2.7
°C/W mW/°C
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ Tstg
-55 to +150
°C
ESD Discharge MIL STD 883C - Method 3015-6 IEC1000-4-2, Air Discharge IEC1000-4-2, Contact Discharge
VPP
16 16 9
kV
Lead Solder Temperature (10 seconds duration)
TL
260
°C
NZQA6V8XV5T1 Features
• SOT-553 Package Allows Four Separate Unidirectional Configurations • Low Leakage < 1 A @ 3 Volt for NZQA5V6XV5T1 • Breakdown Voltage: 5.6 Volt - 6.8 Volt @ 1 mA • ESD Protection Meeting IEC61000-4-2 - Level 4