NGP8203N, NGPP72, NH0001883S Selling Leads, Datasheet
MFG:ON Package Cooled:TO-220 3 LEAD STANDARD D/C:08+
NGP8203N, NGPP72, NH0001883S Datasheet download
Part Number: NGP8203N
MFG: ON
Package Cooled: TO-220 3 LEAD STANDARD
D/C: 08+
NGP8203N, NGPP72, NH0001883S
- Table of contents:
Info of NGP8203N
Info of NGPP72
Info of NH0001883S
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About NGP8203N
PDF/DataSheet Download
Datasheet: NGP8203N
File Size: 84503 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
About NGP15N41CL
PDF/DataSheet Download
Datasheet: NGP15N41CL
File Size: 97229 KB
Manufacturer: ONSEMI [ON Semiconductor]
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About NH00CG10
PDF/DataSheet Download
Datasheet: NH00CG10
File Size: 438269 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
NGP8203N General Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required
NGP8203N Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
|
Collector−Emitter Voltage |
VCES |
440 |
V |
|
Collector−Gate Voltage |
VCER |
440 |
V |
|
Gate−Emitter Voltage |
VGE |
15 |
V |
|
Collector Current−Continuous |
IC |
20 |
ADC |
|
Continuous Gate Current |
IG |
1.0 |
mA |
|
Transient Gate Current (t2 ms, f100 Hz) |
IG |
20 |
mA |
|
ESD (Charged−Device Model) |
ESD |
2.0 |
kV |
|
ESD (Human Body Model) |
ESD |
8.0 |
kV |
|
ESD (Machine Model) R = 0 w, C = 200 pF |
ESD |
500 |
V |
|
Total Power Dissipation @ TC = 25°C |
PD |
150 |
Watts |
|
Operating & Storage Temperature Range |
TJ, Tstg |
−55 to +175 |
°C |
NGP8203N Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
NGP8203N Typical Application
• Ignition Systems
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