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NGP8203N

IGBT Transistors IGBT TO220 400V 20A

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NGP8203N: IGBT Transistors IGBT TO220 400V 20A

NGP8203N Data Sheet

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Part Number:
NGP8203N
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/17

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 440 V
Maximum Gate Emitter Voltage : +/- 15 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Rail    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Collector- Emitter Voltage VCEO Max : 440 V
Package / Case : TO-220-3
Packaging : Rail
Maximum Gate Emitter Voltage : +/- 15 V


Features:

• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)


Application

• Ignition Systems


Specifications

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCES

440

V

Collector−Gate Voltage

VCER

440

V

Gate−Emitter Voltage

VGE

15

V

Collector Current−Continuous
@ TC = 25°C − Pulsed

IC

20
50

ADC
AAC

Continuous Gate Current

IG

1.0

mA

Transient Gate Current (t2 ms, f100 Hz)

IG

20

mA

ESD (Charged−Device Model)

ESD

2.0

kV

ESD (Human Body Model)
R = 1500 w, C = 100 pF

ESD

8.0

kV

ESD (Machine Model) R = 0 w, C = 200 pF

ESD

500

V

Total Power Dissipation @ TC = 25°C
Derate above 25°C

PD

150
1.0

Watts
W/°C

Operating & Storage Temperature Range

TJ, Tstg

−55 to +175

°C




Description

This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGP8203N features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary NGP8203N uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required




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