MFG:RFMD (VA) Category:RF and RFID Package Cooled:4-MIRI D/C:09+
NBB-300-T1, NBB310, NBB-310 Datasheet download
Category: RF and RFID
MFG: RFMD (VA)
Package Cooled: 4-MIRI
D/C: 09+
Description: IC AMP MMIC GAAS 12GHZ 4-MICROX
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PDF/DataSheet Download
Datasheet: NBB10-30GM50-E2
File Size: 33029 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NBB10-30GM50-E2
File Size: 33029 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NBB10-30GM50-E2
File Size: 33029 KB
Manufacturer:
Download : Click here to Download
| Technical/Catalog Information | NBB-300-T1 |
| Vendor | RFMD (VA) |
| Category | RF and RFID |
| Package / Case | 4-Micro-X |
| Voltage - Supply | 3.6V ~ 4.2V |
| Current - Supply | 50mA |
| Gain | 11dB ~ 13dB |
| Frequency | 0Hz ~ 12GHz |
| RF Type | LMDS, VSAT, WLAN, UNII, DWDM, PTP PMP |
| Packaging | Digi-Reel? |
| Noise Figure | 5.1dB @ 3GHz |
| P1db | 13.8dBm @ 6GHz |
| Test Frequency | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NBB 300 T1 NBB300T1 689 1000 6 ND 68910006ND 689-1000-6 |
The NBB-310 is a type of cascadable broadband InGaP/GaAs MMIC amplifier, which is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, offering unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-310 provides flexibility and stability. The NBB-310 is packaged in a low-cost, surface-mount ceramic package, offering ease of assembly for highvolume tape-and-reel requirements. It is available in either pack aged or chip (NBB-310-D) form, where its gold metallization is suited for hybrid circuit designs.
Features of the NBB-310 are:(1)reliable, low-Cost HBT design;(2)13dB gain;(3)high P1dB of +15.2dBm at 6GHz;(4)single power supply operation;(5)50 I/O matched for high freq. use.
The absolute maximum ratings and specifications of the NBB-310 can be summarized as:(1):RF input power is +20 dBm;(2):power dissipation is 350 mW;(3):device current is 70 mA;(4):channel temperature is 200 °C; (5):operating temperature is from -45 °Cto +85 °C;(6):storage temperature is -65°C to +150 °C.specifications:(1):small signal power gain S21 is 12.5dB min and 13.0dB typ when f is 0.1GHz to 1.0GHz;(2):gain flatness is ±0.6 dB typ when f is 0.1GHz to 8.0GHz;(3)input and output VSWR is 1.4:1 typ when f is 0.1GHz to 7.0GHz;(4):noise figure, NF is 4.9 dB typ when f is 3.0GHz;(5):third order intercept, IP3 is +24.0 dBm typ when f is 2.0GHz;(6):device voltage, VD is 4.6 V min, 5.0V typ and 5.3 V max;(7):junction temperature is 139 °C.etc.
| Series | NBB |
| Frequency (MHz) | DC to 12000 |
| Gain (dB) | 11.5 at 4000 |
| NF (dB) | 4.9 |
| OP1dB (dBm) | 13.8 |
| IP1dB (dBm) | 2.8 |
| OIP3 (dBm) | +24.0 |
| Vcc (V) | 4.6 to 5.3 |
| Icc (mA) | 50 |
| Package/Size (Dim in mm) | Micro-X Ceramic |
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