MZ056, MZ0912B100Y, MZ0912B50Y Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOP D/C:2007+
MZ056, MZ0912B100Y, MZ0912B50Y Datasheet download
Part Number: MZ056
MFG: PHILIPS
Package Cooled: SOP
D/C: 2007+
MFG:PHILIPS Package Cooled:SOP D/C:2007+
MZ056, MZ0912B100Y, MZ0912B50Y Datasheet download
MFG: PHILIPS
Package Cooled: SOP
D/C: 2007+
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PDF/DataSheet Download
Datasheet: MZ0912B100Y
File Size: 101258 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MZ0912B100Y
File Size: 101258 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MZ0912B50Y
File Size: 92910 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 65 | V |
VCES | collector-emitter voltage | RBE = 0 | - | 60 | V |
VCEO | collector-emitter voltage | open base | - | 20 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | collector current(DC) | tp 10 ms; 10% | - | 6 | A |
Ptot | total power dissipation (peak power) |
tp 10 ms; 10%;Tmb = 75 | - | 290 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | operating junction temperature | - | 200 | ||
Tsld | soldering temperature | up to 0.2 mm from ceramic; t 10 s |
- | 235 |
· Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collectorbase voltage | openemitter | - | 65 | v |
VCEO | collector-emitter voltage | open base | - | 20 | v |
VCES | collector-emitter voltage | RBE = 0 | - | 60 | v |
VEBO | emitter-base voltage | open collector | - | 3 | v |
IC | collector current (DC) | tp 10 s; 10% | - | 3 | A |
Ptot | total power dissipation (peak power) | Tmb = 75 ; tp 10 s; 10% | - | 150 | w |
Tstg | storage temperature | -65 | +200 | ||
Tj | operating junction temperature | - | 200 | ||
Tsld | soldering temperature | t 10 s; note 1 | - | 235 |