Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of di...
MZ0912B50Y: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization real...
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Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collectorbase voltage | openemitter | - | 65 | v |
VCEO | collector-emitter voltage | open base | - | 20 | v |
VCES | collector-emitter voltage | RBE = 0 | - | 60 | v |
VEBO | emitter-base voltage | open collector | - | 3 | v |
IC | collector current (DC) | tp 10 s; 10% | - | 3 | A |
Ptot | total power dissipation (peak power) | Tmb = 75 ; tp 10 s; 10% | - | 150 | w |
Tstg | storage temperature | -65 | +200 | ||
Tj | operating junction temperature | - | 200 | ||
Tsld | soldering temperature | t 10 s; note 1 | - | 235 |