Transistors Bipolar (BJT) BULKTR TNS-MICP
MZ0912B100Y,114: Transistors Bipolar (BJT) BULKTR TNS-MICP
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Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting...
Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting...
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 20 V |
Emitter- Base Voltage VEBO : | 3 V | Maximum DC Collector Current : | 6 A |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | CDFM |
Packaging : | Tray |