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MX0842B, MX0912B100Y, MX0912B250Y

Table of contents:
Info of MX0842B
Info of MX0912B100Y
Info of MX0912B250Y

MX0842B, MX0912B100Y, MX0912B250Y Selling Leads, Datasheet

MFG:378 Package Cooled:Shindengen D/C:ZIP-6

MX0842B, MX0912B100Y, MX0912B250Y Picture

MX0842B, MX0912B100Y, MX0912B250Y Datasheet download

Five Points

Part Number: MX0842B

MFG: 378

Package Cooled: Shindengen

D/C: ZIP-6

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MX0912B100Y General Description

NPN silicon planar epitaxial microwave power transistors.

The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs.

The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.

MX0912B100Y Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	65	V
V_CES	collector-emitter voltage	R_BE = 0	-	60	V
V_CEO	collector-emitter voltage	open base	-	20	V
V_EBO	emitter-base voltage	open collector	-	3	V
I_C	collector current(DC)	tp 10 ms; 10%	-	6	A
P_tot	total power dissipation (peak power)	t_p 10 ms; 10%;T_mb = 75	-	290	W
T_stg	storage temperature		-65	+200
T_j	operating junction temperature		-	200
T_sld	soldering temperature	up to 0.2 mm from ceramic; t 10 s	-	235

MX0912B100Y Features

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing and low thermal resistance
· Input and output matching cell allows an easier design of circuits.

MX0912B100Y Typical Application

· Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.

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